Ferroelectricity in Doped Hafnium Oxide: Materials ...
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO 2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials.
Hafnium dioxide - Wikipedia
Hafnia is used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices. Hafnium-based oxides were introduced by Intel in 2007 as a replacement for silicon oxide as a gate insulator in field-effect transistors. The advantage for transistors is its high dielectric constant: the dielectric constant of HfO2 is 4–6 times higher than that of SiO2. The dielectric constant and other properties depend on the deposition method, composition and microstructure of the material.
Lanthanum-Doped Hafnium Oxide: A Robust …
Additional structural data concerning the polycrystalline nature of lanthanum-doped ferroelectric hafnium oxide in a capacitor structure with titanium nitride electrodes (XRD, SEM, TEM, TOFSIMS) and more figures concerning detailed electrical characterization . pdf.
Ferroelectricity in yttrium-doped hafnium oxide: …
07-12-2011 · Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO 1.5 in HfO 2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase.
Pyroelectricity of silicon-doped hafnium oxide thin …
02-04-2018 · Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found.
Lanthanum-Doped Hafnium Oxide: A Robust …
15-02-2018 · Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now.
Ferroelectric Tunneling Junctions Based on …
31-12-2019 · Ferroelectric Hafnium Oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories. 2013 Ieee International Electron Devices Meeting (Iedm) (2013). 29.
Si Doped Hafnium Oxide—A “Fragile” Ferroelectric …
Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the worlds first ferroelectric field‐effect transistor in the state‐of‐the‐art 28 nm technology.
(PDF) Doped Hafnium Oxide – An Enabler for …
The ferroelectric behaviour of silicon doped hafnium oxide has been investigated using metal–insulator– metal capacitor structures for film thicknesses of 9 and 27 nm, annealing temperatures ...
Hafnium - an overview | ScienceDirect Topics
Brienne Johnson, Jacob L. Jones, in Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, 2019. Abstract. Hafnium dioxide (HfO 2) has long been known as a refractory material due to its high melting temperature (~ 2800°C) and low thermal conductivity (1.5 W/m K) [1, 2].Refractories are thermally insulating materials known to withstand high temperatures without being ...
Ferroelectricity in Doped Hafnium Oxide - 1st Edition
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications ...
Hafnium Oxide Doped Mesostructured Silica Films …
Hafnium oxide doped silica films with ordered mesostructures were produced with hafnium:silicon ratios between 1:60 and 1:6. A surfactant–hafnium alkoxide complex was synthesized and used as a template in a sol–gel dip‐coating process.
Ferroelectricity in Hafnium Oxide: Materials and …
The special topic will deal with all aspects of ferroelectricity in hafnium oxide-based materials. Topics covered include, but are not limited to: Microscopic origin of ferroelectricity in doped and undoped hafnium oxide
(PDF) Ferroelectricity in Hafnium Oxide Thin Films
05-09-2011 · doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO. 2. crystallize in a monoclinic/tetragonal phase mixture. We observed that the formation of the.
Ferroelectricity In Doped Hafnium Oxide | …
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Ferroelectricity in Doped Hafnium Oxide: Materials ...
12-04-2019 · Ferroelectricity in Doped Hafnium Oxide. Ferroelectricity in Doped Hafnium Oxide covers all aspects related to the structural and electrical properties of semiconductor devices, and the implementation of ferroelectric HfO 2 - and ZrO 2-based thin films into these devices, including a comparison to standard ferroelectric materials.Ferroelectric and field-induced ferroelectric properties …
Ferroelectric Hafnium Oxide Doped with Aluminum …
In the last few years, doped metal oxides, including hafnium oxide (HfO 2 ) and zirconium oxide (ZrO 2 ), were found to possess a ferroelectric phase. As compared to traditional ferroelectric perovskites, ferroelectric HfO 2 has the advantages of a high coercive field, excellent scalability, and good compatibility with CMOS processing.
Electrical properties of yttrium-doped hafnium …
05-05-2020 · Ferroelectric yttrium-doped hafnium-zirconium dioxide (Y-HZO) thin films were fabricated by solution process on Pt/Ti/SiO 2 /Si substrates. Both metal–ferroelectric–metal (MFM) structures with Pt top electrode and metal–ferroelectric–semiconductor (MFS) structures with indium tin oxide (ITO) top electrode were fabricated and characterized.
Formulation for Deposition of Silicon Doped …
1. A composition for depositing a silicon doped hafnium oxide film comprising: 1) at least one organoaminosilane precursor compound having a formula of R x Si(NR 1 R 2) 4-x; wherein R is halide selected from the group consisting of Cl, Br, and I; R 1 and R 2 are independently selected from linear or branched C 1 to C 6 alkyl in organoamino group; wherein R 1 and R 2 are linked to form a cyclic ...